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GMBT5551 GTM NPN EPITAXIAL PLANAR TRANSISTOR

Description 1/2 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT5551 is designed for general purpose applications requiring high breakdown voltages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter www.DataSheet4U.co...
Features A IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without n...

Datasheet PDF File GMBT5551 Datasheet - 201.28KB

GMBT5551  






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