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1SS404 Datasheet Preview

1SS404 Datasheet

Silicon Epitaxial Planar Diode

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1SS404 pdf
Production specification
Silicon Epitaxial Planar Diode
FEATURES
Small surface mounting type
Fast reverse recovery time:IR=50μA(Max.)
Small total capacitance :CT=46pF(typ.)
Pb
Lead-free
Excellent in forward current and forward voltage
characteristics :VF=0.8V(Typ.)
1SS404
APPLICATIONS
High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS404
S51
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Limits
Peak reverse voltage
VRM
25
DC Reverse Voltage
VR 20
Average Rectified Output Current
IO
300
Power Dissipation
PD 200
Junction temperature
Tj 125
Storage temperature
TSTG
-55 to +125
Unit
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
Min.
TYP.
0.16
0.22
0.38
IR
CT
Max.
0.45
50
46
Unit
V
μA
pF
Conditions
IF=1mA
IF=10mA
IF=300mA
VR=20V
VR=0V,f=1MHz
B007
Rev.A
www.gmesemi.com
1



GME
GME

1SS404 Datasheet Preview

1SS404 Datasheet

Silicon Epitaxial Planar Diode

No Preview Available !

1SS404 pdf
Production specification
Silicon Epitaxial Planar Diode
1SS404
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
B007
Rev.A
www.gmesemi.com
2


Part Number 1SS404
Description Silicon Epitaxial Planar Diode
Maker GME
Total Page 3 Pages
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