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Freescale Semiconductor Electronic Components Datasheet

MW7IC2750GNR1 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MW7IC2750GNR1 pdf
Freescale Semiconductor
Technical Data
Document Number: MW7IC2750N
Rev. 0, 5/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
www.datasAhBeeat4nud.cComlass C amplifier applications.
T1P0yopuMtic=Hal8zWCWihMaatAtnsXnAePlvegBr.a,fonfrd=mw2aid7nt0che0,:IMnVpHDuDzt,=S8i02g28n.a1Vl6oPdltA,sR,64ID=QQ91A.5=Md13B6/40@, m4 0Ab.,u0Ir1Ds%tQs2,P=ro5b5a0bmilitAy,
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 49 dBc in 1 MHz Channel Bandwidth
Driver Applications
CTPyohpuatinc=anl4eWlWBiMaatnAtsdXwAPivdegthr.,f,ofIrn=mp2au7nt 0cSe0ig:MnVaHDlDzP,=A8R0228=.1V96o.d5lt,sd,6B4ID@QQ1A0=M.01316/%40,
m4 Abu, rIDstQs2,
= 550 mA,
10 MHz
Probability on
CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 57 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 50 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 80 W CW
Pout
Pout @ 1 dB Compression Point w 50 Watts CW
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
2700 MHz, 8 W AVG., 28 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MW7IC2750NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MW7IC2750GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MW7IC2750NBR1
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
VDS1
VGS2
VGS1
NC
NC
RFin
RFin
NC
NC
VGS1
VGS2
VDS1
1
2
3
4
14
5
6
7
8
9 13
10
11
12
(Top View)
RFout /VDS2
RFout /VDS2
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW7IC2750GNR1 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

MW7IC2750GNR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
www.datasheet4u.com
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW Application
(Case Temperature 80°C, Pout = 50 W CW)
Stage 1, 28 Vdc, IDQ1 = 160 mA
Stage 2, 28 Vdc, IDQ2 = 550 mA
Symbol
VDS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
13
Value (2,3)
3.0
0.7
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
Final Application
(Case Temperature 70°C, Pout = 8 W CW)
Stage 1, 28 Vdc, IDQ1 = 160 mA
Stage 2, 28 Vdc, IDQ2 = 550 mA
2.9
0.7
Driver Application
(Case Temperature 65°C, Pout = 4 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 160 mA
Stage 2, 28 Vdc, IDQ2 = 550 mA
2.8
0.7
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 46 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test)
VGS(Q)
3
3.8 4.5 Vdc
Stage 1 — Dynamic Characteristics (4)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 550 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Part internally matched both on input and output.
(continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
2 Freescale Semiconductor


Part Number MW7IC2750GNR1
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Maker Freescale Semiconductor
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