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Freescale Semiconductor Electronic Components Datasheet

MW7IC2725NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MW7IC2725NBR1 pdf
Freescale Semiconductor
Technical Data
Document Number: MW7IC2725N
Rev. 2, 10/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2300 - 2700 MHz. This multi - stage
www.datasshtreuect4tuu.rceomis rated for 26 to 32 Volt operation and covers all typical cellular
base station modulations.
TPyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM, I3D/4Q,2 = 275 mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance:
Pout = 26 dBm Avg., f = 2700
MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM,
I3D/Q4,2
=
275
mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 56 dBc in 1 MHz Channel Bandwidth
Capable
CW
of
Handling
10:1
VSWR,
@
32
Vdc,
2600
MHz,
Pout
=
25
Watts
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 W CW
Pout
Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500 - 2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2725NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2725NBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
RFin 6
16 GND
15 NC
14 RFout/VDS2
RFin
VGS1 Quiescent Current
VGS2 Temperature Compensation (1)
VDS1
Figure 1. Functional Block Diagram
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13 NC
12 GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW7IC2725NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW7IC2725NBR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
www.datasheet4u.com
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDS
VGS
VDD
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
225
20
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
WiMAX Application
(Case Temperature 75°C, Pout = 4 W Avg.)
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.9
1.4
CW Application
(Case Temperature 81°C, Pout = 25 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.5
1.3
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
Stage 1 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
2.7
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW7IC2725NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 24 Pages
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