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Freescale Semiconductor Electronic Components Datasheet

MW7IC2220NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MW7IC2220NBR1 pdf
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2000 to 2200 MHz. This multi - stage
www.datasshtreuect4tuur.ceoims rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
Typical Single - Carrier
IDQ2 = 300 mA, Pout =
2WW- CatDtsMAAvgP.e, rFfourlml Farnecqeu:eVnDcyD
B=a2n8dV, Colhtsa,nInDeQl1
=
80
mA,
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
Typical Pout @ 1 dB Compression Point ' 20 Watts CW
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts
CW Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC2220N
Rev. 0, 9/2008
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
2110 - 2170 MHz, 2 W Avg., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2220NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2220GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2220NBR1
GND
VDS1
NC
1
2
3
16 GND
15 NC
VDS1
NC 4
NC 5
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
RFin
NC
VGS1
VGS2
VDS1
GND
6 14
7
8
9
10 13
11 12
(Top View)
RFout/VDS2
NC
GND
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW7IC2220NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW7IC2220NBR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
www.datasheet4u.com
Operating Junction
Temperature
(1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +5
32, +0
- 65 to +150
150
225
20
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
2 W Avg.
(Pout = 2 W Avg., Case Temperature = 78°C)
Stage 1, 28 Vdc, IDQ1 = 80 mA
Stage 2, 28 Vdc, IDQ2 = 300 mA
4.3
1.5
20 W Avg.
(Pout = 20 W Avg., Case Temperature = 82°C)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 80 mA
Stage 2, 28 Vdc, IDQ2 = 300 mA
4.3
1.25
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.2
2
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 80 mAdc)
VGS(Q)
2.8
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test)
VGG(Q)
9.5
12.2 16.5
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW7IC2220NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 27 Pages
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