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Freescale Semiconductor Electronic Components Datasheet

MRF9080LR3 Datasheet

RF Power Field Effect Transistors

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MRF9080LR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
www.datasheetsp4oeuu.rcfroocmremaamnpcleifieorf
these devices
applications in
make
26 volt
them
base
ideal for largesignal,
station equipment.
common
Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080
Rev. 5, 12/2004
MRF9080LR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL NCHANNEL
RF POWER MOSFETs
CASE 46506, STYLE 1
NI780
MRF9080LR3
CASE 465A06, STYLE 1
NI780S
MRF9080LSR3
Table 1. Maximum Ratings
Rating
DrainSource Voltage
GateSource Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
0.5, +65
0.5, +15
250
1.43
65 to +150
200
Value
0.7
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9080LR3 MRF9080LSR3
51


Freescale Semiconductor Electronic Components Datasheet

MRF9080LR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF9080LR3 pdf
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
Zero Gate Voltage Drain Leakage Current
www.datashee(tV4DuS.c=om26 Vds, VGS = 0)
GateSource Leakage Current
(VGS = 5 Vdc, VDS = 0 )
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
CommonSource Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Coss
Crss
P1dB
Gps
η1
η2
IRL
Ψ
— — 10 µAdc
——
1 µAdc
——
1 µAdc
2.0 — 4.0 Vdc
— 3.7 — Vdc
— 0.19 0.4 Vdc
— 8.0 —
S
— 73 — pF
— 2.9 — pF
68 75 —
17 18.5 20
47 52 —
— 55 —
9.5 12.5 —
W
dB
%
%
dB
No Degradation In Output Power
Before and After Test
1. Part is internally input matched.
2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080LR3 MRF9080LSR3
52
Freescale Semiconductor
Wireless RF Product Device Data


Part Number MRF9080LR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 12 Pages
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