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Freescale Semiconductor Electronic Components Datasheet

MRF6S19120HR3 Datasheet

RF Power Field Effect Transistors

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MRF6S19120HR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
TS10yyp0ni0cc,amPl ASa,ginPingogleu,t-T=Craa1fr9friicWerCaNottds-eCAsDv8Mg.TA, hFPruoelulrgfFohrrem1q3au)necCnech:yaVnBDnaDenld=B,2aIS8nd-V9wo5ildtsCt,hDI=DMQA=(Pilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40μNominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19120H
Rev. 1, 5/2006
MRF6S19120HR3
MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19120HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
407
2.3
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
RθJC
0.43
0.45
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S19120HR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19120HR3 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
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Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.7 Adc)
gfs — 6.9 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.95 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 14 15 17 dB
Drain Efficiency
ηD 20 21.5 — %
Adjacent Channel Power Ratio
ACPR
- 54 - 48 dBc
Input Return Loss
IRL — - 13 - 9 dB
1. Part is internally matched both on input and output.
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S19120HR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
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