http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

MRF6S19100NBR1 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19100NBR1 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
TPPyaopugtiicn=agl2,22T-rWCafaafirtctrsiCeArovNdge-.s,CFD8uMTllhAFrroPeueqgruhfeo1nrm3cy)aCnBchaean:ndVn, DeISDl B-=9a52n8dCwVDiodMltthAs,=(IPD1iQ.lo2=t2,89S85y0MncmH, zA.,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
N Suffix Indicates Lead - Free Terminations
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S19100N
Rev. 1, 5/2006
MRF6S19100NR1
MRF6S19100NBR1
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
287
1.64
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
RθJC
0.61
0.65
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S19100NBR1 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S19100NBR1 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
www.datasheet4u.com
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
0.24
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.2 Adc)
gfs — 5.3 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps 13 14.5 16 dB
Drain Efficiency
ηD 24 25.5 36 %
Intermodulation Distortion
IM3 - 47 - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
- 60
- 51
- 48
dBc
Input Return Loss
IRL — - 12 - 10 dB
1. Part is internally matched both on input and output.
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S19100NBR1
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 16 Pages
PDF Download
MRF6S19100NBR1 pdf
Download PDF File
MRF6S19100NBR1 pdf
View for Mobile






Related Datasheet

1 MRF6S19100NBR1 RF Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor
MRF6S19100NBR1 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components