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Freescale Semiconductor Electronic Components Datasheet

MRF6S18060NBR1 Datasheet

RF Power Field Effect Transistors

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MRF6S18060NBR1 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
www.datasGhSeeMt4Au.pcopmlication
CTyWp,icFaul lGl FSrMeqPueernfocyrmBaanncde:(1V8D0D5=- 128680VdMcH, zIDoQr=1963000-m19A9,0PMouHt =z)60 Watts
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
TP19yopu3ti0c=a- 1l29G59S0WMMaEtHtsDz)GAvEgP.,eFrufollrmFraenqcuee:nVcDyDB=an2d6
(V1o8l0ts5,-I1D8Q8=0
450 mA,
MHz or
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18060N
Rev. 3, 5/2006
MRF6S18060NR1
MRF6S18060NBR1
1800 - 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
216
1.2
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
RθJC
0.81
0.95
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRF6S18060NBR1 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF6S18060NBR1 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
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Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2
2.8
4 Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.24
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 5.3 — S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W CW, f = 1930 MHz, f = 1990 MHz
Power Gain
Gps 14 15 17 dB
Drain Efficiency
ηD 48 50 — %
Input Return Loss
IRL — - 12 - 9 dB
Pout @ 1 dB Compression Point
1. Part is internally matched both on input and output.
P1dB
60
65
W
(continued)
MRF6S18060NR1 MRF6S18060NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRF6S18060NBR1
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 20 Pages
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