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Freescale Semiconductor Electronic Components Datasheet

MRF19090SR3 Datasheet

RF Power Field Effect Transistors

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MRF19090SR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
www.datasheTety4pui.ccaolmCDMA Performance: 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts Avg.
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF19090
Rev. 6, 5/2006
MRF19090R3
MRF19090SR3
1930- 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF19090R3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
CASE 465C - 02, STYLE 1
NI - 880S
MRF19090SR3
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
270
1.54
- 65 to +150
150
200
Value
0.65
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF19090R3 MRF19090SR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF19090SR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF19090SR3 pdf
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
IDSS
IGSS
gfs
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz)
1. Part is internally matched both on input and output.
P1dB
Min
65
2.0
2.5
10
33
Typ
7.2
3.8
0.10
4.2
11.5
35
- 30
- 12
90
Max Unit
— Vdc
10 μAdc
1 μAdc
—S
4.0 Vdc
4.5 Vdc
— Vdc
— pF
— dB
—%
- 28 dBc
— dB
—W
MRF19090R3 MRF19090SR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF19090SR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 8 Pages
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