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Freescale Semiconductor Electronic Components Datasheet

MRF19060LR3 Datasheet

RF Power Field Effect Transistors

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MRF19060LR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
www.datasahpepeltic4au.tcioonms.
Typical CDMA Performance: 1960 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Document Number: MRF19060
Rev. 9, 5/2006
MRF19060LR3
MRF19060LSR3
1930- 1990 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF19060LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19060LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
180
1.03
- 65 to +150
150
200
Value
0.97
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF19060LR3 MRF19060LSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF19060LR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF19060LR3 pdf
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz)
1. Part is internally matched both on input and output.
P1dB
Min
65
2
2.5
11
33
Typ
3.9
0.27
2.7
12.5
36
- 31
- 12
60
Max Unit
— Vdc
6 μAdc
1 μAdc
4V
4.5 V
—V
— pF
— dB
—%
- 28 dBc
— dB
—W
MRF19060LR3 MRF19060LSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRF19060LR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 8 Pages
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