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Freescale Semiconductor Electronic Components Datasheet

MMZ09312BT1 Datasheet

Heterojunction Bipolar Transistor

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MMZ09312BT1 pdf
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 400 to 1000 MHz such as
CDMA, GSM, LTE and ZigBeeR at operating voltages from 3 to 5 Volts. The
amplifier is housed in a cost--effective, surface mount QFN plastic package.
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
PAE
(%) Test Signal
900 MHz
24
31.5
--50.0
26.0 IS--95 CDMA
750 MHz
17.5
32.0
--50.0
15.3 LTE
10/20 MHz
450 MHz
29
33.0 --40.0 57.0
ZigBee
Features
Frequency: 400--1000 MHz
P1dB: 29.6 dBm @ 900 MHz
Power Gain: 31.7 dB @ 900 MHz
OIP3: 42 dBm @ 900 MHz
Active Bias Control (adjustable externally)
Single 3 to 5 Volt Supply
Performs Well with Digital Predistortion Systems
Single--ended Power Detector
Cost--effective QFN Surface Mount Package
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In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMZ09312B
Rev. 1, 2/2012
MMZ09312BT1
400--1000 MHz, 31.7 dB
29.6 dBm
InGaP HBT
CASE 2131--01
QFN 3x3
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol
450
MHz
900
MHz
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Gp
IRL
33.8 31.7
--22 --15
dB
dB
Output Return Loss (S22) ORL
--25 --18 dB
Power Output @ 1dB
Compression
P1dB
28.8 29.6 dBm
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6V
Supply Current
ICC 550 mA
RF Input Power
Pin 14 dBm
Storage Temperature Range Tstg
--65 to +150 °C
Junction Temperature (2)
TJ
150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (3)
Thermal Resistance, Junction to Case
Case Temperature 84°C, VCC1 = VCC2 = VBIAS = 5 Vdc
RθJC
56
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
1
datasheet pdf - http://www.DataSheet4U.net/


Freescale Semiconductor Electronic Components Datasheet

MMZ09312BT1 Datasheet

Heterojunction Bipolar Transistor

No Preview Available !

MMZ09312BT1 pdf
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Gp 29 31.7 —
IRL — --15 —
dB
dB
Output Return Loss (S22)
ORL
--18 —
dB
Power Output @ 1dB Compression
P1dB
29.6
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
42
— dBm
Noise Figure
NF — 4 — dB
Supply Current (1)
Supply Voltage (1)
Table 5. ESD Protection Characteristics
ICQ 69 74 83 mA
VCC
5
V
Test Methodology
Class
Human Body Model (per JESD22--A114)
Meets 2000 V for all pins except:
Pin 11 meets 400 V
Pin 8 meets 200 V
Class 0 Rating
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1
1. For reliable operation, the junction temperature should not exceed 150°C.
260 °C
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VBA1
VBIAS
RFin
VBA2
VCC1
BIAS
CIRCUIT
GND
GND GND PDET
Figure 1. Functional Block Diagram
VCC2
RFout
RFout
VBA2 VCC1 GND
12 11 10
VBA1
VBIAS
RFin
1
2
3
9 VCC2
8 RFout
7 RFout
456
GND GND PDET
Figure 2. Pin Connections
MMZ09312BT1
2
RF Device Data
Freescale Semiconductor, Inc.
datasheet pdf - http://www.DataSheet4U.net/


Part Number MMZ09312BT1
Description Heterojunction Bipolar Transistor
Maker Freescale Semiconductor
Total Page 20 Pages
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