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Freescale Semiconductor Electronic Components Datasheet

MHL9838N Datasheet

Cellular Band RF Linear LDMOS Amplifier

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MHL9838N pdf
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Freescale Semiconductor
Technical Data
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra - linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
Third Order Intercept: 50 dBm Typ
Power Gain: 31 dB Typ (@ f = 880 MHz)
Input and Output VSWR v 1.5:1
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
For Use in TDMA and CDMA Multi - Carrier Applications
N Suffix Indicates Lead - Free Terminations
Document Number: MHL9838N
Rev. 7, 8/2006
MHL9838N
800 - 925 MHz
8.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
VDD
Pin
Tstg
TC
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 880 MHz)
(f = 800 - 925 MHz)
(f = 880 MHz)
IDD
Gp
GF
P1dB
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
Noise Figure
(f = 925 MHz)
NF
Value
30
+6
- 40 to +100
- 20 to +100
Min Typ Max
— 770 800
29.5 31 32.5
— 0.1 0.3
— 39 —
49 50 —
— 3.7 4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHL9838N
1


Freescale Semiconductor Electronic Components Datasheet

MHL9838N Datasheet

Cellular Band RF Linear LDMOS Amplifier

No Preview Available !

MHL9838N pdf
TYPICAL CHARACTERISTICS
40
Gp
20
60
55 VDD = 28 Vdc
TC = 25°C
50 ITO
0
−20
−40
400
ORL
IRL VDD = 28 Vdc
TC = 25°C
800 1200 1600
f, FREQUENCY (MHz)
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
2000
45
40
P1dB
35
30
500 600 700 800 900 1000 1100
f, FREQUENCY (MHz)
Figure 2. P1dB, ITO versus Frequency
1200
33 820
32 VDD = 28 Vdc 800
f = 880 MHz
Gp
31
780
30 IDD
760
29 740
28
−40 −20
0 20 40 60
TEMPERATURE (°C)
720
80 100 120
Figure 3. Power Gain, IDD versus Temperature
52 41
50 ITO 40
48 39
P1dB
46 38
44 37
42
VDD = 28 Vdc
f = 880 MHz
36
40
−40 −20
0 20 40 60
TEMPERATURE (°C)
80 100
Figure 4. ITO, P1dB versus Temperature
35
120
−420
−425
−430
PHASE
−435
VDD = 28 Vdc
f = 880 MHz
2.2
2.1
−440 GROUP DELAY
2.0
−445 1.9
−450
−40 −20
0 20 40 60
TEMPERATURE (°C)
1.8
80 100 120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
MHL9838N
2
0.30 0.80
0.25
VDD = 28 Vdc
f = 800−925 MHz
0.70
0.20 0.60
0.15 0.50
GF
0.10
0.40
PHASE LINEARITY
0.05 0.30
0
−40 −20
0 20 40 60
TEMPERATURE (°C)
0.20
80 100 120
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
RF Device Data
Freescale Semiconductor


Part Number MHL9838N
Description Cellular Band RF Linear LDMOS Amplifier
Maker Freescale Semiconductor
Total Page 5 Pages
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