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Freescale Semiconductor Electronic Components Datasheet

MDE6IC9120GNR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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Freescale Semiconductor
Technical Data
Document Number: MDE6IC9120N
Rev. 0, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with
on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE Output PAR ACPR
(%)
(dB)
(dBc)
MDE6IC9120NR1
MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
940 MHz
960 MHz
32.5 38.4
32.0 38.0
31.3 37.7
6.6 - 39.0
6.7 - 40.4
7.0 - 39.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
CASE 1866 - 02
TO - 270 WBL - 16
PLASTIC
MDE6IC9120NR1
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to
120 Watts CW Pout
Typical Pout @ 1 dB Compression Point ] 120 Watts CW
Features
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance
Parameters and Common Source S - Parameters
CASE 1867 - 02
TO - 270 WBL - 16 GULL
PLASTIC
MDE6IC9120GNR1
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
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VGS1A
RFinA
VGS2A
VDS1A
VDS1B
VGS2B
RFinB
Quiescent Current
Temperature Compensation (1)
CARRIER (2)
RFout1/VDS2A
PEAKING (2)
RFout2/VDS2B
VGS1A
GND
RFinA
GND
GND
VGS2A
VDS1A
VDS1B
VGS2B
GND
GND
RFinB
GND
VGS1B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
RFout1/VDS2A
15 RFout2/VDS2B
VGS1B
Quiescent Current
Temperature Compensation (1)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
1


Freescale Semiconductor Electronic Components Datasheet

MDE6IC9120GNR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MDE6IC9120GNR1 pdf
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
- 0.5, +66
- 0.5, +10
32, +0
- 65 to +150
150
225
30
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Characteristic
Symbol
Value (2,3)
Unit
Final Doherty Application
Thermal Resistance, Junction to Case
Case Temperature 80°C, Pout = 30 W CW
Stage 1A, 27 Vdc, IDQ1A = 90 mA
Stage 1B, 27 Vdc, IDQ1B = 90 mA
Stage 2A, 27 Vdc, IDQ2A = 550 mA
Stage 2B, 27 Vdc, VG2B = 2.5 Vdc
Table 3. ESD Protection Characteristics
RθJC
°C/W
6.0
4.9
1.3
0.95
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
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MDE6IC9120NR1 MDE6IC9120GNR1
2
RF Device Data
Freescale Semiconductor


Part Number MDE6IC9120GNR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 18 Pages
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