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Freescale Semiconductor Electronic Components Datasheet

MD8IC970NR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MD8IC970NR1 pdf
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD8IC970N wideband integrated circuit is designed with on--chip
prematching that makes it usable from 136 to 940 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical base station
modulation formats. This device has a 2--stage design with off--chip matching
for the input, interstage and output networks to cover the desired frequency
sub--band.
Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts,
IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
IMD
(dBc)
850 MHz
900 MHz
940 MHz
30.6 40.1 --30.5
31.9 42.4 --31.0
32.6 42.1 --31.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW
www.DOautatSphuetetP4Uo.wneetr (3 dB Input
Enhanced Ruggedness
Overdrive
from
Rated
Pout),
Designed
for
Typical Pout @ 1 dB Compression Point 79 Watts CW
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Prematching. On--Chip Stabilization.
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Document Number: MD8IC970N
Rev. 2, 5/2011
MD8IC970NR1
MD8IC970GNR1
850--940 MHz, 35 W AVG., 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1866--02
TO--270 WBL--16
PLASTIC
MD8IC970NR1
CASE 1867--02
TO--270 WBL--16 GULL
PLASTIC
MD8IC970GNR1
RFin2A
RFout1A/VD1A
VG1A
RFin1A
VG2A
RFout1BR/VFiDn21BB
VG2B
RFin1B
Quiescent Current
Temperature Compensation (1)
RFout2A/VD2A
RFout2B/VD2B
RFout1AR/VFGiDnN21DAA
GND
VG1A
RVVFiGGn122AAB
RVFiGn11BB
GND
GND
RFout1B/VD1B
RFin2B
1
2
3
4 16
5
6
7
8
9
10 15
11
12
13
14
(Top View)
RFout2A/
VD2A
RFout2B/
VD2B
VG1B
Quiescent Current
Temperature Compensation (1)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MD8IC970NR1 MD8IC970GNR1
1


Freescale Semiconductor Electronic Components Datasheet

MD8IC970NR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MD8IC970NR1 pdf
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
--0.5, +70
--0.5, +10
32, +0
--65 to +150
150
225
30
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Characteristic
Symbol
Value (2,3)
Unit
Final Application
Thermal Resistance, Junction to Case
Case Temperature 80°C, 35 W Avg. Two--Tone
Stage 1, 28 Vdc, IDQ1(A+B) = 60 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
Stage 2, 25 Vdc, IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
Table 3. ESD Protection Characteristics
RθJC
°C/W
2.9
0.6
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
I (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
Stage 1 — On Characteristics (4)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 40 μAdc)
VGS(th)
1.2
2.0
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1(A+B) = 60 mAdc)
VGS(Q)
3.1
— Vdc
Fixture Gate Quiescent Voltage
(VDD1 = 28 Vdc, IDQ1(A+B) = 60 mAdc, Measured in Functional Test)
VGG(Q)
9.0
10.0 11.0 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Side A and Side B are tied together for this measurement.
(continued)
MD8IC970NR1 MD8IC970GNR1
2
RF Device Data
Freescale Semiconductor


Part Number MD8IC970NR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
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