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Freescale Semiconductor Electronic Components Datasheet

MD7IC21100GNR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MD7IC21100GNR1 pdf
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC21100N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A =
IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 Watts Avg.,
f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts
CW (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 100 Watts
CW Pout.
Typical Pout @ 1 dB Compression Point ] 110 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S-Parameters
On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
Internally Matched for Ease of Use
Integrated Quiescent Current Temperature Compensation with
Enable/ Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MD7IC21100N
Rev. 0, 10/2008
www.DataSheet4U.com
MD7IC21100NR1
MD7IC21100GNR1
MD7IC21100NBR1
2110 - 2170 MHz, 32 W Avg., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MD7IC21100NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MD7IC21100GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MD7IC21100NBR1
VDS1A
RFinA
VGS1A
VGS2A
VGS1B
VGS2B
Quiescent Current
Temperature Compensation (1)
Quiescent Current
Temperature Compensation (1)
RFout1/VDS2A
VDS1A
VGS2A
VGS1A
NC
RFinA
NC
NC
RFinB
NC
VGS1B
VGS2B
VDS1B
1
2
3
4
5
6
7
8
9
10
11
12
14
RFout1/VDS2A
13 RFout2/VDS2B
RFinB
VDS1B
Figure 1. Functional Block Diagram
RFout2/VDS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MD7IC21100GNR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MD7IC21100GNR1 pdf
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Vawluwe w.DataSheUent4itU.com
- 0.5, +65
Vdc
- 0.5, +6.0
Vdc
32, +0
Vdc
- 65 to +150
°C
150 °C
225 °C
29 dBm
Value (2,3)
Unit
°C/W
(Case Temperature 76°C, 32 W CW)
(Case Temperature 76°C, 32 W CW)
Stage 1, 28 Vdc, IDQ1A = IDQ1B = 190 mA
Stage 2, 28 Vdc, IDQ2A = IDQ2B = 925 mA
Table 3. ESD Protection Characteristics
2.7
0.7
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ Max
Unit
Stage 1 — Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — —
1 μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS — —
1 μAdc
Stage 1 — On Characteristics (4)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1A = IDQ1B = 190 mAdc)
VGS(Q)
2.9
Vdc
Fixture Gate Quiescent Voltage
VGG(Q)
5.5
6.3
7
Vdc
(VDD = 28 Vdc, IDQ1A = IDQ1B = 190 mAdc, Measured in Functional Test)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Each side of device measured separately.
(continued)
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MD7IC21100GNR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 22 Pages
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