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Fairchild Semiconductor Electronic Components Datasheet

SFF9240 Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
! Lower RDS(ON) : 0.344 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds
SFF9240
BVDSS = -200 V
RDS(on) = 0.5
ID = -7.6 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-7.6
-5.3
30
+_ 30
770
-7.6
6.0
-5.0
60
0.48
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.08
40
Units
oC/W
Rev. A


Fairchild Semiconductor Electronic Components Datasheet

SFF9240 Datasheet

Advanced Power MOSFET

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SFF9240 pdf
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SFF9240
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller”) Charge
-200 -- -- V
-- -0.16 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.5
-- 5.3 -- S
-- 1220 1585
-- 207 310 pF
-- 81 120
-- 16 40
-- 23 55
ns
-- 54 115
-- 19 50
-- 46 59
-- 9.2 -- nC
-- 22.9 --
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-200V
VDS=-160V,TC=125oC
VGS=-10V,ID=-3.8A
VDS=-40V,ID=-3.8A
O4
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-100V,ID=-11A,
RG=9.1
See Fig 13
O4 O5
VDS=-160V,VGS=-10V,
ID=-11A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -7.6
Integral reverse pn-diode
A
-- -30
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-7.6A,VGS=0V
-- 180 -- ns TJ=25oC,IF=-11A
-- 1.24 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=20mH, IAS=-7.6A, VDD=-50V, RG=27*, Starting TJ =25oC
O <_ <_ <_3 ISD -11A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
O <_4 Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature


Part Number SFF9240
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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