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Fairchild Semiconductor Electronic Components Datasheet

SFF9140 Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! 175oC Operating Temperature
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
! Lower RDS(ON) : 0.161 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
SFF9140
BVDSS = -100 V
RDS(on) = 0.2
ID = -13.2 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
-100
-13.2
-9.2
53
+_ 20
580
-13.2
8.0
-6.5
80
0.53
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.88
40
Units
oC/W
Rev. A


Fairchild Semiconductor Electronic Components Datasheet

SFF9140 Datasheet

Advanced Power MOSFET

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SFF9140 pdf
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SFF9140
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
-100 -- --
-- -0.11 --
-2.0 -- -4.0
-- -- -100
-- -- 100
-- -- -10
-- -- -100
-- -- 0.2
V
V/oC
V
nA
µA
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-100V
VDS=-80V,TC=150oC
VGS=-10V,ID=-6.6A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
-- 8.9 -- S VDS=-40V,ID=-6.6A O4
-- 1180 1535
-- 240 360 pF VGS=0V,VDS=-25V,f =1MHz
See Fig 5
-- 83 125
-- 14 40
-- 22 55
VDD=-50V,ID=-17A,
-- 45 100 ns RG=12
-- 26 60
See Fig 13 O4 O5
-- 43 54
-- 7.4 --
-- 17.8 --
VDS=-80V,VGS=-10V,
nC ID=-17A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -13.2
Integral reverse pn-diode
A
-- -53
in the MOSFET
O4 -- -- -4.0 V TJ=25oC,IS=-13.2A,VGS=0V
-- 135 -- ns TJ=25oC,IF=-17A
-- 0.7 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=5.0mH, IAS=-13.2A, VDD=-25V, RG=27*, Starting TJ =25oC
O3 ISD <_-17A, di/dt <_ 450A/µs, VDD <_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature


Part Number SFF9140
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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