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Fairchild Semiconductor Electronic Components Datasheet

J309 Datasheet

N-Channel RF Amplifier

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J309 pdf
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
• Sourced from Process 92.
• Source & Drain are interchangeable.
J309
J310
MMBFJ309
MMBFJ310
G
December 2010
GS D
TO-92
SOT-23
S
Mark MMBFJ309 : 6U
D MMBFJ310 : 6T
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDS
VGS
IGF
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
-25
10
- 55 to +150
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J309-J310 *MMBFJ309-310
625 350
5.0 2.8
127
357 556
Units
mW
mW/°C
°C/W
°C/W
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

J309 Datasheet

N-Channel RF Amplifier

No Preview Available !

J309 pdf
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0
IGSS Gate Reverse Current
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, Ta = 125°C
VGS(off) Gate-Source Cutoff Voltage
VDS = 10V, ID = 1.0nA
309
310
-25
-1.0
-2.0
V
-1.0 nA
-1.0 μA
-4.0 V
-6.5 V
On Characteristics
IDSS
Zero-Gate Voltage Drain
Current*
VDS = 10V, VGS = 0
309 12
310 24
30 mA
60 mA
VGS(f) Gate-Source Forward Voltage
Small Signal Characteristics
VDS = 0, IG = 1.0mA
1.0 V
Re(yis) Common-Source Input
VDS = 10V, ID = 10mA, f = 100MHz
Conductance
309 0.7 mmhos
310 0.5 mmhos
Re(yos) Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
0.25
mmhos
Gpg Common-Gate Power Gain
VDS = 10V, ID = 10mA, f = 100MHz
16
dB
Re(yfs) Common-Source Forward
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
Transconductance
Re(yig) Common-Gate Input
Conductance
VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos
gfs Common-Source Forward
Transconductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309 10,000
310 8,000
20,000 μmhos
18,000 μmhos
goss Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
150 μmhos
gfg Common-Gate Forward
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309
310
13,000
12,000
μmhos
μmhos
gog Common-Gate Output
VDS = 10V, ID = 10mA, f = 1.0kHz
Conductance
309 100 μmhos
310 150 μmhos
Cdg Drain-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
Csg Source-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
NF Noise Figure
VDS = 10V, ID = 10mA, f = 450MHz
en Equivalent Short-Circuit Input VDS = 10V, ID = 10mA, f = 100Hz
Noise Voltage
2.0 2.5
pF
4.1 5.0
pF
3.0 dB
6.0 nV/ Hz
* Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
2
www.fairchildsemi.com


Part Number J309
Description N-Channel RF Amplifier
Maker Fairchild Semiconductor
Total Page 6 Pages
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