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Fairchild Semiconductor Electronic Components Datasheet

G80N60UFD Datasheet

SGH80N60UFD

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G80N60UFD pdf
SGH80N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
TO-3P
GC E
www.DataSheet.net/
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGH80N60UFD
600
± 20
80
40
220
25
280
195
78
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.64
0.83
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
Datasheet pdf - http://www.DataSheet4U.co.kr/


Fairchild Semiconductor Electronic Components Datasheet

G80N60UFD Datasheet

SGH80N60UFD

No Preview Available !

G80N60UFD pdf
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 40mA, VCE = VGE
IC = 40A, VGE = 15V
IC = 80A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 40A,
RG = 5, VGE = 15V,
Inductive Load, TC = 25°C
www.DataSheet.net/
VCC = 300 V, IC = 40A,
RG = 5, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 40A,
VGE = 15V
Measured 5mm from PKG
600 -- -- V
-- 0.6 -- V/°C
-- -- 250 uA
-- -- ± 100 nA
3.5 4.5 6.5
-- 2.1 2.6
-- 2.6 --
V
V
V
-- 2790 --
-- 350 --
-- 100 --
pF
pF
pF
-- 23 -- ns
-- 50 -- ns
--
90 130
ns
--
50 150
ns
-- 570 --
uJ
-- 590 --
uJ
-- 1160 1500 uJ
-- 30 -- ns
-- 55 -- ns
-- 150 200 ns
-- 160 250 ns
-- 630 --
uJ
-- 940 --
uJ
-- 1580 2000 uJ
-- 175 250 nC
-- 25 40 nC
-- 60 90 nC
-- 14 -- nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 25A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 25A,
di/dt = 200A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
105
4.5
8.5
112
420
Max.
1.7
--
95
--
10
--
375
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number G80N60UFD
Description SGH80N60UFD
Maker Fairchild Semiconductor
Total Page 8 Pages
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