| Description | Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Application • Strobe Flash C C C C G E C E E G E 8-SOP Absolut... |
| Features |
• High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive Application • Strobe Flash C C C C G E C E E G E 8-SOP Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL TC = 25°C unless otherrwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipat... |
| Datasheet |
 FGS15N40L Datasheet - 204.73KB |
