| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Applications OringFET / Load Switching Synchronous Rectification... |
| Features |
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Cha...
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| Datasheet |
 FDMS8320L Datasheet - 357.23KB |
