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Fairchild Semiconductor Electronic Components Datasheet

F5E1 Datasheet

AlGaAs INFRARED EMITTING DIODE

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F5E1 pdf
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
DESCRIPTION
The F5E series are 880nm LEDs in a
wide angle, TO-46 package.
0.030 (0.76)
NOM
1.00 (25.4)
MIN
0.155 (3.94)
MAX
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
1
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 ! steradians.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 10µs; 100Hz)
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
IF
VR
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
3
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power F5E1 (7)
Total Power F5E2 (7)
Total Power F5E3 (7)
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
VR = 3 V
IF = 100 mA
IF = 100 mA
IF = 100 mA
SYMBOL
MIN
TYP MAX
"PE — 880 —
# — ±40 —
VF — — 1.7
IR — — 10
PO 12.0 —
PO 9.0 — —
PO 10.5 —
tr — 1.5 —
tf — 1.5 —
UNITS
nm
Deg.
V
µA
mW
mW
mW
µs
µs
2001 Fairchild Semiconductor Corporation
DS300287 4/25/01
1 OF 3
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

F5E1 Datasheet

AlGaAs INFRARED EMITTING DIODE

No Preview Available !

F5E1 pdf
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
Figure 1. Power Output vs. Input Current
10
1.0
0.1
0.01
0.001
1
NORMALIZED TO
IF = 100 mA
TA = 25°C
PULSED INPUTS
PW = 80 µsec
RR = 30 Hz
10 100
IF, INPUT CURRENT (mA)
1000
Figure 2. Power Output vs. Temperature
20
IF = 1 A
10
8
6
4
2
IF = 100 mA
1
0.8
0.6
0.4 NORMALIZED TO
IF = 100 mA, TA = 25°C
0.2 PW = 80 µsec, f = 30 Hz
0.1
-25
0
25 50 75 100
TA, AMBIENT TEMPERATURE (°C)
125
150
Figure 3. Forward Voltage vs. Temperature
4
PW = 80 µsec
f = 30 Hz
IF = 1 A
3
0.5 A
2
100 mA
10 mA
1
-25
0
25 50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Typical Radiation Pattern
100
80
F5E
60
40
20
Figure 5. Output vs. Wavelength
120
100
80 TYPICAL SPECTRAL
RESPONSE OF SLICON
PHOTOSENSORS
60
F5E
40
IF = 100 mA
20 TA = 25°C
0 -80 -60 -40 -20 0 20 40 60 80 100
θ - DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
700 800 900 1000
λ - WAVE LENGTH (nm)
www.fairchildsemi.com
2 OF 3
4/25/01 DS300287


Part Number F5E1
Description AlGaAs INFRARED EMITTING DIODE
Maker Fairchild Semiconductor
Total Page 3 Pages
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