Fremont Micro Devices
3-Wire Serial EEPROM
1K, 2K and 4Kbit (8-bit or 16-bit wide)
93C46/A, 93C56/A, 93C66/A
Standard Voltage and Low Voltage Operation:
VCC = 2.5V to 5.5V
VCC = 1.8V to 5.5V
User Selectable Internal Organization:
FT93C46: 128 x 8 or 64 x 16
FT93C56: 256 x 8 or 128 x 16
FT93C66: 512 x 8 or 256 x 16
2 MHz Clock Rate (5V) Compatibility.
Industry Standard 3-wire Serial Interface.
Self-Timed ERASE/WRITE Cycles (5ms max including auto-erase).
Automatic ERAL before WRAL.
Sequential READ Function.
High Reliability: Typical 1 Million Erase/Write Cycle Endurance.
100 Years Data Retention.
Industrial Temperature Range (-40o C to 85o C).
Standard 8-pin PDIP/SOIC/TSSOP Pb-free Packages.
The FT93C46/56/66 series are 1024/2048/4096 bits of serial Electrical Erasable and Programmable
Read Only Memory, commonly known as EEPROM. They are organized as 64/128/256 words of 16 bits
each when the ORG pin is connected to VCC (or unconnected) and 128/256/512 words of 8 bits (1 byte)
each when the ORG pin is tied to ground. The devices are fabricated with proprietary advanced CMOS
process for low power and low voltage applications. These devices are available in standard 8-lead
PDIP, 8-lead JEDEC SOIC and 8-lead TSSOP packages. Our extended VCC range (1.8V to 5.5V)
devices enables wide spectrum of applications.
The FT93C46/56/66 is enabled through the Chip Select pin (CS), and accessed via a 3-wire serial
interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SCL). Upon receiving a READ
instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO.
The WRITE cycle is completely self-timed and no separate ERASE cycle is required before WRITE. The
WRITE cycle is only enabled when the part is in the ERASE/WRITE ENABLE state. Once a device
begins its self-timed program procedure, the data out pin (DO) can indicate the READY/BUSY status by
rising chip select (CS).
© 2013 Fremont Micro Devices Inc.
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