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Epson Company
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710ECK80 Datasheet Preview

710ECK80 Datasheet

HIGH-FREQUENCY CRYSTAL OSCILLATOR

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710ECK80 pdf
Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
Ceramic package with 1.5 mm thickness.
Excellent shock resistance and environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enabled function (OE) or
standby function (ST).
www.DataSheet4U.Scopmecifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Soldering condition
Symbol
SG-710PTK
SG-710PHK
Specifications
SG-710ECK
f0
1.8000 MHz to
50.0000 MHz
1.8000 MHz to
80.0000 MHz
1.8000 MHz to
67.0000 MHz
VDD-GND
-0.5 V to +7.0 V
VDD 5.0 V ±0.5 V
3.3 V ±0.3 V
TSTG -55 °C to +125 °C
TOPR
-10 °C to +70 °C (-40 °C to +85 °C)
TSOL Twice at under +260 °C within 10 s
Frequency stability
Current consumption
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
TTL
C-MOS
Output enable/disable input voltage
Output rise time
Output fall time
C-MOS level
TTL level
C-MOS level
TTL level
f/f0
Iop
IOE
IST
tw/ t
VOH
VOL
N
CL
VIH
VIL
tTLH
tTHL
B: ±50 x 10-6 C: ± 100 x 10-6 M: ± 100 x 10-6
24 mA Max.
12 mA Max.
40 mA Max.
16 mA Max.
18 mA Max.
45 % to 55 %
2.4 V Min.
0.4 V Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
5 ns Max.
5 ns Max.
45 % to 55 %
10 µA Max.
40 % to 60 %
40 % to 60 %
VDD -0.5 V Min.
0.5 V Max.
10 TTL Max.
0.9 x VDD Min.
0.1 x VDD Max.
50 pF Max.
15 pF Max.
2.0 V Min.
0.7 x VDD Min.
0.8 V Max.
0.3 x VDD Max.
5 ns Max.
6 ns Max.
5 ns Max.
6 ns Max.
Oscillation start up time
tOSC
10 ms Max.
Aging
fa ±5 x 10-6/year Max.
Shock resistance
S.R.
±10 x 10-6 Max.
Remarks
Please contact us on availability of -40 °C to +85 °C
B,C:-10 °C to +70 °C, M:-40 °C to +85 C°
No load condition
OE=GND(PTK, PHK)
ST=GND(ECK)
C-MOS load: 1/2 VDD level
TTL load: 1.4 V level
IOH=-16 mA(PTK,PHK),-2 mA(ECK)
IOL= 16 mA(PTK,PHK), 2 mA(ECK)
_OE terminal(PTK,PHK)
ST terminal(ECK)
C-MOS load: 10 %90 % VDD
TTL load: 0.4 V2.4 V
C-MOS load: 90 %10 % VDD
TTL load: 2.4 V0.4 V
Time at minimum operating voltage to be 0 s
Ta= +25 °C, VDD = 5.0 V/3.3 V(ECK)
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
External dimensions
#4 #3
E 40.000
HC724A
#1 #2
L
5.08
37
Bottom View 1.4
#1 #2
#4 5.08 #3
(Unit: mm)
NO. Pin terminal
1 OE or ST
2 GND
3 OUT
4 VDD
Recommended soldering pattern (Unit: mm)
1.8
LW
PTK/PHK/ECK 7.5 Max. 5.0 Max.
∗∗W 7.2 Max. 5.2 Max.
5.08




Epson Company
Epson Company

710ECK80 Datasheet Preview

710ECK80 Datasheet

HIGH-FREQUENCY CRYSTAL OSCILLATOR

No Preview Available !

710ECK80 pdf
Actual size
www.DataSheSetp4Ue.cciofmications (characteristics)
Item
Symbol
SG-710PTW/STW
SG-710PHW/SHW
Specifications
SG-710PCW/SCW
Output frequency range
f0
Power source Max. supply voltage
voltage
Operating voltage
Temperature Storage temperature
range
Operating temperature
Soldering condition (lead part)
VDD-GND
VDD
TSTG
TOPR
TSOL
Frequency stability
f/f0
Current consumption
Output disable current
Output disable current
Duty
C-MOS level
TTL level
Output voltage
Output load condition (fan out)
Output enable
disable input voltage
Output
C-MOS level
rise time
TTL level
Output
C-MOS level
fall time
TTL level
Iop
IoE
IST
tw/t
VOH
VOL
CL
VIH
VIL
tTLH
tTHL
80.0001 MHz to 135.0000 MHz
66.6667 MHz to
135.0000 MHz
-0.5 V to +7.0 V
5.0 V±0.5 V
3.3 V±0.3 V
-55 °C to +125 °C
-20 °C to +70 °C
-40 °C to +85 °C
Twice at under 260 °C within 10 s or under 230 °C within 3 min.
B: ±50 x 10-6 C: ±100 x 10-6
M: ±100 x 10-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50 µA Max.
40 % to 60 %
40 % to 60 %
VDD-0.4 V Min.
0.4 V Max.
15 pF Max.
2.0 V Min.
0.7 VDD Min.
0.8 V Max.
0.2 VDD Max.
3 ns Max.
3 ns Max.
4 ns Max.
3 ns Max.
3 ns Max.
4 ns Max.
Oscillation start up time
tOSC
10 ms Max.
Aging
fa ±5 x 10-6/year Max.
Shock resistance
S.R.
±20 x 10-6 Max.
Remarks
-20 °C to +70 °C
-40 °C to +85 °C
No load condition
OE=GND(P*W)
ST=GND(S*W)
C-MOS load: 1/2VDD
TTL load: 1.4 V
IOH= -16 mA (*TW/HW)/-8 mA(*CW)
IOL= -16 mA (*TW/HW)/8 mA(*CW)
OE,ST
OE,ST
C-MOS load: 20 %80 % VDD
TTL load: 0.4 V2.4 V
C-MOS load: 80 %20 % VDD
TTL load: 2.4 V0.4 V
Time at 4.5 V to be 0 s
Ta=+25 °C, VDD =5 V
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Operating condition and Frequency band
Operating condition
Frequency stability:B
( -20 to +70 °C)
5 V±0.5 V Frequency stability:C
(-20 to +70 °C)
Frequency stability:M
( -40 to +85 °C)
Frequency stability:B
( -20 to +70 °C)
3.3 V±0.3 V Frequency stability:C
( -20 to +70 °C)
Frequency stability:M
( -40 to +85 °C)
1 MHz
1.8
SG-710PTK
1.8
SG-710PTK
1.8
SG-710PTK
1.8 26
SG-710ECK
1.8 26
SG-710ECK
1.8 26
SG-710ECK
50 MHz
50
SG-710PHK
80
50 80
SG-710PHK
50 80
SG-710PHK
67
67
67
100 MHz
SG-710PTW/STW/PHW/SHW
SG-710PTW/STW/PHW/SHW
150 MHz
135
135
SG-710PCW/SCW
SG-710PCW/SCW
SG-710PCW/SCW
135
135
135
38




Part Number 710ECK80
Description HIGH-FREQUENCY CRYSTAL OSCILLATOR
Maker Epson Company
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