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M11B16161A Datasheet Preview

M11B16161A Datasheet

(M11x16161xA) 1M X 16 DRAM

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M11B16161A pdf
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DRAM
M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
1M x 16 DRAM
EDO PAGE MODE
FEATURES
ORDERING INFORMATION - PACKAGE
y X16 organization
y EDO (Extended Data-Out) access mode
y 2 CAS Byte/Word Read/Write operation
y Single power supply :
5V ± 10% Vcc for 5V product
www.DataSheet43U.3.cVom± 10% Vcc for 3.3V product
y Interface for inputs and outputs
TTL-compatible for 5V products
LVTTL-compatible for 3.3V products
y 1024-cycle refresh in 16ms
y Refresh modes : RAS only, CAS BEFORE RAS (CBR)
and HIDDEN capabilities,
y Optional self-Refresh capabilities(S-ver. Only)
y JEDEC standard pinout
y Key AC Parameter
tRAC
tCAC
tRC
tPC
-45 45 11 77 16
-50 50 13 84 20
-60 60
15 104 25
42-pin 400mil SOJ
44 / 50-pin 400mil TSOP (TypeII)
PRODUCT NO.
Refresh
Vcc
PACKING
TYPE
M11B16161A-45J/50J/60J Normal
M11B16161SA-45J/50J/60J
*Self-
Refresh
5V
M11L16161A-45J/50J/60J Normal
M11L16161SA-45J/50J/60J
Self- 3.3V
Refresh
M11B16161A-45T/50T/60T Normal
M11B16161SA-45T/50T/60T
*Self-
Refresh
5V
M11L16161A-45T/50T/60T Normal
M11L16161SA-45T/50T/60T
Self-
Refresh
3.3V
* Ordered by special request
SOJ
TSOPII
GENERAL DESCRIPTION
The M11B16161/M11L16161 series is a randomly accessed solid state memory, organized as 1,048,576 x 16 bits device. It
offers Extended Data-Output access mode. Single power supply (5V ± 10%, 3.3V ± 10%), access time (-45,-50,-60), self-
refresh function and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before -
RAS , RAS -only refresh and Hidden refresh.
Two access modes are supported by this device : Byte access and Word access. Use only one of the two CAS and leave
the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH ) are used. CASL
transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH transiting low will
output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 VSS
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 VSS
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 N C
31 CASL
30 CASH
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 VSS
TSOP (TypeII) Top View
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
4 4 VSS
4 3 I/O15
4 2 I/O14
4 1 I/O13
4 0 I/O12
3 9 VSS
3 8 I/O11
3 7 I/O10
3 6 I/O9
3 5 I/O8
34 NC
33 NC
3 2 CASL
3 1 CASH
3 0 OE
2 9 A9
2 8 A8
2 7 A7
2 6 A6
2 5 A5
2 4 A4
2 3 VSS
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.3
1/16




EliteMT
EliteMT

M11B16161A Datasheet Preview

M11B16161A Datasheet

(M11x16161xA) 1M X 16 DRAM

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M11B16161A pdf
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FUNCTIONAL BLOCK DIAGRAM
WE
RAS
CASL
CASH
www.DataSheet4U.com
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CONTROL
LOGIC
CLOCK
GENERATOR
COLUMN
10 ADDRESS
BUFFER
REFRESH
CONTROLER
REFRESH
COUNTER
10
ROW.
10 ADDRESS
BUFFERS(10)
M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
DATA-IN BUFFER
IO0
16 :
IO15
COLUMN
10 DECODER
1024
16
SENSE AMPLIFIERS
I/O GATING 8
1024 x 16
DATA-OUT
BUFFER
16
OE
1024 x1024 x 16
1024
MEMORY
10 ARRAY
VBB GENERATOR
VCC
VSS
PIN DESCRIPTIONS
PIN NO.
(SOJ Package)
17~20, 23~28
14
30
31
13
29
2~5,7~10,33~36,38~41
1,6,21
22,37,42
11,12,15,16,32
PIN NAME
A0~A9
RAS
CASH
CASL
WE
OE
I/O0 ~ I/O15
VCC
VSS
NC
TYPE
Input
Input
Input
Input
Input
Input
Input / Output
Supply
Ground
-
DESCRIPTION
Address Input
Row Address : A0~A9
Column Address : A0~A9
Row Address Strobe
Column Address Strobe / Upper Byte Control
Column Address Strobe / Lower Byte Control
Write Enable
Output Enable
Data Input / Output
Power, (5V or 3.3V)
Ground
No Connect
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.3
2/16




EliteMT
EliteMT

M11B16161A Datasheet Preview

M11B16161A Datasheet

(M11x16161xA) 1M X 16 DRAM

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M11B16161A pdf
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M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss
5V Product
… ……-1V to +7V
3.3V Product
… ……-0.5V to +4.6V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.0W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
www.DataSheet4U.com
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C TA 70 °C )
PARAMETER
CONDITIONS
3.3V
SYMBOL
MIN MAX
5V
UNITS NOTES
MIN MAX
Supply Voltage
VCC 3.0 3.6 4.5 5.5 V 1
Supply Voltage
VSS 0 0 0 0 V
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V VIN VIH(max)
0V VOUT VCC
Output(s) disable
5V IOH = -5 mA
3.3V IOH = -2 mA
5V IOL = 4.2 mA
3.3V IOL = 2 mA
VIH
VIL
ILI
ILO
VOH
VOL
2.0 VCC +0.3 2.4 VCC +0.3 V
-1.0 0.8 -1.0 0.8
V
-10 10 -10 10 µ A
-10 10 -10 10 µ A
2.4 - 2.4 - V
- 0.4 - 0.4 V
1
1
Note : 1.All Voltages referenced to VSS
PARAMETER
CONDITIONS
MAX
SYMBOL
UNITS NOTES
-45 -50 -60
Operating Current
RAS , CAS cycling , tRC =min
ICC1 150 140 130 mA 1,2
Standby Current
RAS only refresh Current
EDO Page Mode Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4 4 4 mA
ICC2
CMOS interface, RAS , CAS VCC-0.2V
2 2 2 mA
tRC = min
ICC3 150 140 130 mA
2
tPC = min
ICC4 150 140 130 mA 1,3
CAS Before RAS Refresh
Current
Battery Backup Current
(S-ver. Only)
Self Refresh Current
(S-ver. Only)
tRC = min
Standby with CBR refresh, tRC = 62.4us
tRAS 300ns, DOUT =Hi-Z, CMOS interface
RAS , CAS 0.2V, DOUT =Hi-Z, CMOS
interface
ICC6
ICC7
ICC8
150 140 130 mA
500 500 500 µ A
500 500 500 µ A
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.3
3/16




Part Number M11B16161A
Description (M11x16161xA) 1M X 16 DRAM
Maker EliteMT
Total Page 16 Pages
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1 M11B16161A (M11x16161xA) 1M X 16 DRAM EliteMT
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