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P06P03LDG Datasheet Preview

P06P03LDG Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P06P03LDG pdf
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P06P03LDG
TO-252
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 45m
ID
-12A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
LIMITS
-30
±20
-12
-10
-30
48
20
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Case
RθJc
3 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
75 °C / W
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-1 -1.5 -3.0
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -5V, VGS = -10V
VGS = -4.5V, ID =- 10A
VGS = -10V, ID = -12A
VDS = -10V, ID = -12A
-30
60
37
16
A
75
m
45
S
AUG-17-2004
1



ETC
ETC

P06P03LDG Datasheet Preview

P06P03LDG Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

P06P03LDG pdf
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P06P03LDG
TO-252
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -12A
VDS = -15V, RL = 1
ID -1A, VGS = -10V, RGS = 6
530
135
70
10 14
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
trr IF = -5A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-12
-30
-1.2
15.5
7.9
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P06P03LDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name
AUG-17-2004
2


Part Number P06P03LDG
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker ETC
Total Page 5 Pages
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