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M11B416256A-35J Datasheet Preview

M11B416256A-35J Datasheet

256 K x 16 DRAM EDO PAGE MODE

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M11B416256A-35J pdf
EliteMT
DRAM
M11B416256A
256 K x 16 DRAM
EDO PAGE MODE
FEATURES
X16 organization
EDO (Extended Data-Output) access mode
2 CAS Byte/Word Read/Write operation
Single 5V ( ± 10%) power supply
TTL-compatible inputs and outputs
512-cycle refresh in 8ms
Refresh modes : RAS only, CAS BEFORE RAS (CBR)
and HIDDEN
JEDEC standard pinout
Key AC Parameter
tRAC
tCAC
tRC
tPC
-25 25 8 43 10
-28 28 9 48 11
-30 30 9 55 12
-35 35 10 65 14
-40 40 11 75 16
ORDERING INFORMATION - PACKAGE
40-pin 400mil SOJ
44 / 40-pin 400mil TSOP (TypeII)
PRODUCT NO.
M11B416256A-25J
M11B416256A-28J
M11B416256A-30J
M11B416256A-35J
M11B416256A-40J
M11B416256A-25T
M11B416256A-28T
M11B416256A-30T
M11B416256A-35T
M11B416256A-40T
PACKING TYPE
SOJ
TSOPII
GENERAL DESCRIPTION
The M11B416256A is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers Extended
Data-Output , 5V( ± 10%) single power supply. Access time (-25,-28,-30,-35,-40) and package type (SOJ, TSOP II) are optional
features of this family. All these family have CAS - before - RAS , RAS -only refresh and Hidden refresh capabilities.
Two access modes are supported by this device : Byte access and Word access. Use only one of the two CAS and leave
the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH ) are used.
CASL transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH
transiting low will output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
TSOP (TypeII) Top View
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 VSS
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 VSS
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 N C
29 CASL
28 CASH
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 VSS
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 VSS
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 VSS
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 N C
29 CASL
28 CASH
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 VSS
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
1/15




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M11B416256A-35J Datasheet Preview

M11B416256A-35J Datasheet

256 K x 16 DRAM EDO PAGE MODE

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M11B416256A-35J pdf
EliteMT
FUNCTIONAL BLOCK DIAGRAM
M11B416256A
WE
RAS
CASL
CASH
A0
A1
A2
A3
A4
A5
A6
A7
A8
CONTROL
LOGIC
CLOCK
GENERATOR
COLUMN
9 ADDRESS
BUFFER
REFRESH
CONTROLER
REFRESH
COUNTER
99
ROW.
9 ADDRESS
BUFFERS(9)
DATA-IN BUFFER
IO0
16 :
IO15
9
COLUMN
DECODER
512 16
SENSE AMPLIFIERS
I/O GATING 8
512 x 16
DATA-OUT
BUFFER
16
OE
512 x 512 x 16
512 MEMORY
9 ARRAY
VBB GENERATOR
VCC
VSS
PIN DESCRIPTIONS
PIN NO.
16~19,22~26
14
28
29
13
27
2~5,7~10,31~34,36~39
1,6,20
21,35,40
11,12,15,30
PIN NAME
A0~A8
RAS
CASH
CASL
WE
OE
I/O0 ~ I/O15
VCC
VSS
NC
TYPE
Input
Input
Input
Input
Input
Input
Input / Output
Supply
Ground
-
DESCRIPTION
Address Input
Row Address : A0~A8
Column Address : A0~A8
Row Address Strobe
Column Address Strobe / Upper Byte Control
Column Address Strobe / Lower Byte Control
Write Enable
Output Enable
Data Input / Output
Power, 5V
Ground
No Connect
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
2/15




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M11B416256A-35J Datasheet Preview

M11B416256A-35J Datasheet

256 K x 16 DRAM EDO PAGE MODE

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M11B416256A-35J pdf
EliteMT
M11B416256A
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-1V to +7V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.43W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C TA 70 °C ; VCC = 5V ± 10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN MAX UNITS NOTES
Supply Voltage
Supply Voltage
VCC 4.5 5.5 V 1
VSS 0 0 V
Input High Voltage
VIH 2.4 VCC +0.3 V
1
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
0V VIN VIH (max)
0V VOUT VCC
Output(s) disable
IOH = -5 mA
VIL -0.3 0.8 V 1
ILI -10 10 µ A
ILO -10 10 µ A
VOH 2.4
-
V
Output Low Voltage
IOL = 4.2 mA
VOL - 0.4 V
Note : 1.All Voltages referenced to VSS
PARAMETER
Operating Current
CONDITIONS
RAS , CAS cycling , tRC =min
MAX
UNITS NOTES
SYMBOL
-25 -28 -30 -35 -40
ICC1 210 190 170 150 135 mA 1,2
Standby Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4 4 4 4 4 mA
ICC2
CMOS interface, RAS , CAS VCC-0.2V
2 2 2 2 2 mA
RAS only refresh Current tRC = min
ICC3 210 190 170 150 135 mA
EDO Page Mode Current tPC = min
ICC4 210 190 170 150 135 mA
Standby Current
RAS =VIH, CAS = VIL
ICC5 5 5 5 5 5 mA
CAS Before RAS
Refresh
Current
tRC = min
ICC6 210 190 170 150 135 mA
2
1,3
1
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
3/15




Part Number M11B416256A-35J
Description 256 K x 16 DRAM EDO PAGE MODE
Maker ETC
Total Page 15 Pages
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