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60N035 Datasheet Preview

60N035 Datasheet

N-Channel Field Effect Transistor

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60N035 pdf
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low RDS(ON)
VDSS = 30V
RDS (ON) = 0.015
ID = 60A
Ordering Information
Device
Package
60N035T
60N035S
TO-220
TO-263 ( D2 )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
Parameter
ID
VDSS
VGSV
PD
TJ
TSTG
Drain Current
Continues
Pulsed
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ TC =25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
60
180
30
±20
50
0.4
-65 to 175
Unit
A
V
V
W
W/°C
°C
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com



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60N035 Datasheet Preview

60N035 Datasheet

N-Channel Field Effect Transistor

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60N035 pdf
60N035
Electrical Characteristics ( TC = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min
OFF CHARACTERSTICS
BVDSS
Drain source breakdown
voltage
IDSS
Zero Gate Voltage Drain
Current
IGBLF
Gate-Body Leakage Forward
IGBLR
Gate-Body Leakage Reverse
ON CHARACTERSTICS
VGS Gate Threshold Voltage
VGS=0V, ID=250µA
VDS=24V
VGS=0V
VGS=20V
VGS=20V
VDS=0V
VDS=0V
VDS=VGS
ID=250µA
30
1
RDS(ON)
Static Drain Voltage
VGS=10V, ID=26A
VCS=4.5V, IO=21A
ID(ON)
gfs
ON-State Drain Current
Forward Tran conductance
VGS=10V
DYNAMIC CHARACTRISTICS
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Tras. Capacitance
VDS= 15V, VGS=0V
F=1.0 MHZ
SWITCHING CHARACTERSTICS
tD(ON)
tr
td(off)
tF
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
VDD=15V
ID=52A, VDS=10V
RGEN=25
SOURCE DRAIN DIODE CHRACTERISTICS
IS
VDS (note)
Maxim Continuous Drain source Diode Forward Current
Drain Source Diode
VGS=0V
Forward Votlage
IS=26A
THERMAI CHRACTERISTICS
RJC Thermal Resistance, Junction to Case
RJC Thermal Resistance, Junction to Ambient
60
Typ
0.014
Max Units
V
10 µA
100 nA
-100 nA
3
0.015
0.025
V
A
1500
700
300
60
200
50
120
60
1.35
pF
pF
pF
nS
A
V
2.5 °C/W
62.5 °C/W
Note: Pulse Test: Pulse With300 µS, Duty Cycle 2.0%
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com


Part Number 60N035
Description N-Channel Field Effect Transistor
Maker ETC
Total Page 2 Pages
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