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2N6073A Datasheet Preview

2N6073A Datasheet

Sensitive Gate Triacs

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2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
**Peak Repetitive Off-State Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
VDRM,
VRRM
200
400
600
Unit
Volts
*On-State RMS Current (TC = 85°C) IT(RMS) 4.0 Amps
Full Cycle Sine Wave 50 to 60 Hz
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
30 Amps
3.7 A2s
*Peak Gate Power
(Pulse Width 1.0 µs, TC = 85°C)
*Average Gate Power
(t = 8.3 ms, TC = 85°C)
*Peak Gate Voltage
(Pulse Width 1.0 µs, TC = 85°C)
*Operating Junction Temperature Range
PGM
PG(AV)
VGM
TJ
10
0.5
5.0
–40 to
+110
Watts
Watt
Volts
°C
*Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (6-32 Screw)(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
http://onsemi.com
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2
MT1
G
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
ORDERING INFORMATION
Device
2N6071A
2N6071B
Package
TO225AA
TO225AA
Shipping
500/Box
500/Box
2N6073A
TO225AA
500/Box
2N6073B
2N6075A
2N6075B
TO225AA
TO225AA
TO225AA
500/Box
500/Box
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
2N6071/D



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2N6073A Datasheet Preview

2N6073A Datasheet

Sensitive Gate Triacs

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2N6073A pdf
2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Max
3.5
75
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Max Unit
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
"*Peak On-State Voltage(1)
(ITM = 6 A Peak)
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40°C)
All Quadrants
IDRM,
IRRM
VTM
VGT
— — 10 µA
——
2 mA
——
2 Volts
Volts
— 1.4 2.5
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
All Quadrants
VGD
0.2 —
Volts
*Holding Current
"(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 1 Adc)
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
(TJ = –40°C)
(TJ = 25°C)
IH
tgt
mA
— — 30
— — 15
— 1.5 — µs
QUADRANT
(Maximum Value)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
Type
2N6071A
2N6073A
2N6075A
IGT
@ TJ
+25°C
–40°C
I II III IV
mA mA mA mA
5 5 5 10
20 20 20 30
2N6071B
2N6073B
2N6075B
+25°C
–40°C
3 335
15 15 15 20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
— 5 — V/µs
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2


Part Number 2N6073A
Description Sensitive Gate Triacs
Maker ETC
Total Page 8 Pages
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