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EIC discrete Semiconductors
EIC discrete Semiconductors

RM10Z Datasheet Preview

RM10Z Datasheet

SILICON RECTIFIER DIODES

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RM10Z pdf
RM10 - RM10Z
PRV : 200 - 800 Volts
Io : 1.2 - 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
SILICON RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RM10Z
200
140
200
RM10
400
280
400
RM10A
600
420
600
RM10B
800
560
800
UNIT
Volts
Volts
Volts
IF 1.5
1.2 Amps.
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
120
150
0.91
10
50
30
50
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998



EIC discrete Semiconductors
EIC discrete Semiconductors

RM10Z Datasheet Preview

RM10Z Datasheet

SILICON RECTIFIER DIODES

No Preview Available !

RM10Z pdf
RATING AND CHARACTERISTIC CURVES ( RM10 - RM10Z )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.5
RM10Z
1.2
RM10 - RM10B
0.9
0.6
0.3
60 Hz RESISTIVE OR INDUCTIVE LOAD
0 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
120
RM10 - RM10B
90
60
RM10Z
30
01
2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1 TJ = 25 °C
0.01
0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number RM10Z
Description SILICON RECTIFIER DIODES
Maker EIC discrete Semiconductors
Total Page 2 Pages
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