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Directed Energy
Directed Energy

501N04A Datasheet Preview

501N04A Datasheet

RF Power MOSFET

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501N04A pdf
Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE150-501N04A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
500 V
4.5 A
1.5
Symbol Test Conditions
Maximum Ratings
PDHS
=
80W
VDSS
www.DataSheet4U.coVmDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
500 V
TJ = 25°C to 150°C; RGS = 1 M
500 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
4.5 A
Tc = 25°C, pulse width limited by TJM
27 A
Tc = 25°C
4.5 A
Tc = 25°C
- mJ
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
3.5 V/ns
>200 V/ns
80 W GATE
3.5 W
DRAIN
-55…+150
150
°C
°C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150
300
2
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2 3 4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
1.5
VDS = 15 V, ID = 0.5ID25, pulse test
2.7 4.0
S
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density



Directed Energy
Directed Energy

501N04A Datasheet Preview

501N04A Datasheet

RF Power MOSFET

No Preview Available !

501N04A pdf
Directed Energy, Inc.
An IXYS Company
DE150-501N04A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
www.DataSheet4U.coTmd(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
RthJHS
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
5
600 pF
50 pF
5 pF
4 ns
4 ns
4 ns
4 ns
16 40 nC
2.0 6.0 nC
8.0 20 nC
1.5 K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle 2%
4.5 A
27 A
1.4 V
Trr 900 ns
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045


Part Number 501N04A
Description RF Power MOSFET
Maker Directed Energy
Total Page 3 Pages
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