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Diodes Semiconductor Electronic Components Datasheet

AF15N50 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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AF15N50 pdf
NOT RECOMMENDED FOR NEW DESIGN
USE DMT6016LPS
AF15N50
50V N-CHANNEL MOSFET
Description
This N-Channel MOSFET has been designed specifically to improve
the overall efficiency and to minimize switch node ringing of DC-DC
converters using either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low RDS(ON), fast
switching speed and body diode reverse recovery performance.
The AF15N50 is available in PDFN-5×6-8 package.
Features
Typ RDS(ON)=14.32mΩ @ VGS=10V, ID=15A
Typ RDS(ON)=16.36mΩ @ VGS=4.5V, ID=15A
RoHS Compliant
Pin Assignments
(Top View)
S1
S2
S3
G4
8D
7D
EP
6D
5D
PDFN-5×6-8 (Option 1)
(Top View)
Pin 1 Mark
S1
8D
S2
S3
G4
7D
EP
6D
5D
PDFN-5×6-8 (Option 2)
Applications
Primary Switch in Isolated DC-DC
Synchronous Rectifier
Load Switch
AF15N50
Datasheet Number: DS39584 Rev. 1 - 3
1 of 8
www.diodes.com
February 2017
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AF15N50 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

AF15N50 pdf
Internal Structure
NOT RECOMMENDED FOR NEW DESIGN
USE DMT6016LPS
DG
DS
DS
DS
AF15N50
Absolute Maximum Ratings (Note 1, TC= +25ºC, unless otherwise specified.)
Symbol
Parameter
Value
Unit
VDS Drain to Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
VGS Gate to Source Voltage
PD Power Dissipation
TOP Operating Temperature Range
TSTG Storage Temperature Range
50
TC=+25 ºC
15
TC=+100 ºC
15
60
±12
31
-55 to +150
-55 to +150
V
A
A
V
W
ºC
ºC
Note 1:
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
θJA
θJC
Parameter
Thermal Resistance (Note 2)
Thermal Resistance
Condition
Junction to Ambient
Junction to Case
Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.
Value
50
4
Unit
C/W
C/W
AF15N50
Datasheet Number: DS39584 Rev. 1 - 3
2 of 8
www.diodes.com
February 2017
© Diodes Incorporated



Diodes Semiconductor Electronic Components Datasheet

AF15N50 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

AF15N50 pdf
NOT RECOMMENDED FOR NEW DESIGN
USE DMT6016LPS
Electrical Characteristics (TC = +25°C, unless otherwise specified.)
Static Characteristics
Symbol
VDSS(BR)
VGS(TH)
IDSS
IGSS
RDS(ON)
Parameters
Drain to Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-state
Resistance
Conditions
VGS=0V, ID=0.25mA
VDS=VGS, ID=0.25mA
VDS=50V, VGS=0V
VGS=10V, VDS=0V
VGS=10V, ID=15A
VGS=4.5V, ID=15A
Min Typ
50 _
0.5 0.9
__
__
10 14.32
12 16.36
AF15N50
Max
_
2
1
±10
20
30
Unit
V
V
μA
μA
mΩ
Dynamic Characteristics
Symbol
Parameters
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Qgs Gate to Source Charge
Qgd
Gate to Drain Charge (Miller
Charger)
Qg Total Gate Charge
Rg Gate Resistance
Conditions
VGS=0V, VDS=18V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=18V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=18V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
VGS=10V, ID=15A, VDD=25V,
RG=6
VGS=0V to 10V, VDD=25V,
ID=15A
_
Min
Typ
Max
Unit
_ 1350 _
pF
_ 1316 _
_ 110 _
pF
_ 97 _
_ 95 _
pF
_ 85 _
_ 4.162 _
_ 14.85 _
_ 35.452 _
ns
_ 31.108 _
_ 3.2 _
_ 5.7 _ nC
_ 15.2 _
_ 0.85 _
AF15N50
Datasheet Number: DS39584 Rev. 1 - 3
3 of 8
www.diodes.com
February 2017
© Diodes Incorporated




Part Number AF15N50
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 8 Pages
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