| Description | This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -25V IC = -3A High Continuous Current Low Saturation Voltage VCE(sat) < -250mV @ -1A RCE(sat) = 93mΩ for a Low Equivalent On-Resistance hFE Specified up to -6A for a High Gain Hold-Up Complementary NPN Type: DIODES™ FZT689B Lead-Free Finish; RoHS Complian... |
| Features |
BVCEO > -25V IC = -3A High Continuous Current Low Saturation Voltage VCE(sat) < -250mV @ -1A RCE(sat) = 93mΩ for a Low Equivalent On-Resistance hFE Specified up to -6A for a High Gain Hold-Up Complementary NPN Type: DIODES™ FZT689B Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Th... |
| Datasheet |
 FZT789AQ Datasheet - 1.15MB |
