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Cypress Semiconductor Electronic Components Datasheet

CYDM128A08 Datasheet

1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM

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CYDM128A08 pdf
CYDM256A16, CYDM128A16,
CYDM064A16, wCwYw.DDaMtaS1h2ee8t4AU.c0o8m,
CYDM064A08
1.8V 4K/8K/16K x 16 and 8K/16K x 8
MoBL® Dual-Port Static RAM
Features
• True dual-ported memory cells which allow simulta-
neous access of the same memory location
• 4/8/16K × 16 and 8/16K x 8 organization
• High-speed access: 35 ns
• Ultra Low operating power
— Active: ICC = 15 mA (typical) at 55 ns
— Active: ICC = 25 mA (typical) at 35 ns
— Standby: ISB3 = 2 µA (typical)
• Small footprint: Available in a 6x6 mm 100-pin
Lead(Pb)-free fBGA
• Supports 1.8V, 2.5V, and 3.0V I/Os
• Full asynchronous operation
• Automatic power-down
• Pin select for Master or Slave
• Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
• On-chip arbitration logic
• Semaphores included to permit software handshaking
between ports
• Input Read Registers and Output Drive Registers
• INT flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Industrial temperature ranges
Selection Guide for 1.8V
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-35
35
25
2
2
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-55
55
15
2
2
Unit
ns
mA
µA
µA
Selection Guide for 2.5V
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
Selection Guide for 3.0V
Maximum Access Time
Typical Operating Current
Typical Standby Current for ISB1
Typical Standby Current for ISB3
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-35
35
39
6
4
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-55
55
28
6
4
Unit
ns
mA
µA
µA
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-35
35
49
7
6
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
-55
55
42
7
6
Unit
ns
mA
µA
µA
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-06081 Rev. *F
Revised October 31, 2005


Cypress Semiconductor Electronic Components Datasheet

CYDM128A08 Datasheet

1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM

No Preview Available !

CYDM128A08 pdf
I/O[15:0]L
UBL
LBL
IO
Control
CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
wCwYw.DDaMtaS0he6e4t4AU.c0o8m
IO
Control
I/O[15:0]R
UBR
LBR
16K X 16
Dual Ported Array
Address Decode
Address Decode
A[13:0]L
CE L
OE L
R/W L
SEML
BUSY L
Interrupt
Arbitration
Semaphore
INTL
Mailboxes
INTR
M/S
IRR0 ,IRR1
CEL
OEL
R/WL
Input Read
Register and
Output Drive
Register
SFEN
CE R
OE R
R/W R
ODR0 - ODR4
Figure 1. Top Level Block Diagram[1,2]
Notes:
1. A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices.
2. BUSY is an output in master mode and an input in slave mode.
A [13:0]R
CE R
RO/WE RR
SEMR
BUSY R
Document #: 38-06081 Rev. *F
Page 2 of 25


Part Number CYDM128A08
Description 1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM
Maker Cypress Semiconductor
Total Page 25 Pages
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