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Cypress Semiconductor Electronic Components Datasheet

CYDC064B16 Datasheet

1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM

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CYDC064B16 pdf
CYDC256B16, CYDC128B16,
CYDC064B16,wCwwY.DDaCtaS1h2ee8t4BU.c0o8m,
CYDC064B08
1.8V 4k/8k/16k x 16 and 8k/16k x 8
ConsuMoBL Dual-Port Static RAM
Features
• True dual-ported memory cells which allow simulta-
neous access of the same memory location
• 4/8/16k × 16 and 8/16k × 8 organization
• High-speed access: 40 ns
• Ultra Low operating power
— Active: ICC = 15 mA (typical) at 55 ns
— Active: ICC = 25 mA (typical) at 40 ns
— Standby: ISB3 = 2 µA (typical)
• Port-independent 1.8V, 2.5V, and 3.0V I/Os
• Lead (Pb)-free 14 x 14 x 1.4 mm 100-pin TQFP Package
• Full asynchronous operation
• Pin select for Master or Slave
• Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
• On-chip arbitration logic
• On-chip semaphore logic
• Input Read Registers and Output Drive Registers
• INT flag for port-to-port communication
• Separate upper-byte and lower-byte control
• Commercial and industrial temperature ranges
Selection Guide for VCC = 1.8V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
Port I/O Voltages (P1-P2)
1.8V-1.8V
Maximum Access Time
40
Typical Operating Current
25
Typical Standby Current for ISB1
Typical Standby Current for ISB3
2
2
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
1.8V-1.8V
55
15
2
2
Unit
ns
mA
µA
µA
Selection Guide for VCC = 2.5V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
Port I/O Voltages (P1-P2)
2.5V-2.5V
Maximum Access Time
40
Typical Operating Current
39
Typical Standby Current for ISB1
Typical Standby Current for ISB3
6
4
Selection Guide for VCC = 3.0V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
Port I/O Voltages (P1-P2)
3.0V-3.0V
Maximum Access Time
40
Typical Operating Current
49
Typical Standby Current for ISB1
Typical Standby Current for ISB3
7
6
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
2.5V-2.5V
55
28
6
4
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
3.0V-3.0V
55
42
7
6
Unit
ns
mA
µA
µA
Unit
ns
mA
µA
µA
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-01638 Rev. *E
Revised January 25, 2007
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Cypress Semiconductor Electronic Components Datasheet

CYDC064B16 Datasheet

1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM

No Preview Available !

CYDC064B16 pdf
I/O[15:0]L
UBL
LBL
IO
Control
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
wCwwY.DDaCtaS0he6e4t4BU.c0o8m
IO
Control
I/O[15:0]R
UBR
LBR
16K X 16
Dual Ported Array
Address Decode
Address Decode
A[13:0]L
CE L
OE L
R/W L
SEML
BUSY L
Interrupt
Arbitration
Semaphore
INTL
Mailboxes
INTR
M/S
IRR0 ,IRR1
CEL
OEL
R/WL
Input Read
Register and
Output Drive
Register
SFEN
CE R
OE R
R/W R
ODR0 - ODR4
Figure 1. Top Level Block Diagram[1, 2]
Notes:
1. A0–A11 for 4k devices; A0–A12 for 8k devices; A0–A13 for 16k devices.
2. BUSY is an output in master mode and an input in slave mode.
A [13:0]R
CE R
RO/WE RR
SEMR
BUSY R
Document #: 001-01638 Rev. *E
Page 2 of 26
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Part Number CYDC064B16
Description 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
Maker Cypress Semiconductor
Total Page 26 Pages
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