| Description | The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and... |
| Features |
■ High speed ❐ tAA = 10 ns ■ Ultra-low power PowerSnooze™[1] device ❐ Deep Sleep (DS) current IDS = 22-µA maximum ■ Low active and standby currents ❐ ICC = 90-mA typical ❐ ISB2 = 20-mA typical ■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ Embedded error-correcting code (ECC) for single-bit error correction ■ ... |
| Datasheet |
 CY7S1061GE Datasheet - 900.77KB |
