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Cypress Semiconductor Electronic Components Datasheet

CY14B104LA Datasheet

4-Mbit (512 K X 8/256 K X 16) nvSRAM

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CY14B104LA pdf
CY14B104LA, CY14B104NA
4-Mbit (512 K × 8/256 K × 16) nvSRAM
Features
20 ns, 25 ns, and 45 ns access times
Internally organized as 512 K × 8 (CY14B104LA) or 256 K ×
16 (CY14B104NA)
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and recall cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20%, -10% operation
Industrial temperature
Packages
44-/54-pin thin small outline package (TSOP II)
48-ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CY14B104LA/CY14B104NA is a fast static RAM
(SRAM), with a nonvolatile element in each memory cell. The
memory is organized as 512 K bytes of 8 bits each or 256 K
words of 16 bits each. The embedded nonvolatile elements
incorporate QuantumTrap technology, producing the world’s
most reliable nonvolatile memory. The SRAM provides infinite
read and write cycles, while independent nonvolatile data
resides in the highly reliable QuantumTrap cell. Data transfers
from the SRAM to the nonvolatile elements (the STORE
operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
Logic Block Diagram[1, 2, 3]
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Notes
1. Address A0 - A18 for ×8 configuration and Address A0 - A17 for ×16 configuration.
2. Data DQ0 - DQ7 for ×8 configuration and Data DQ0 - DQ15 for ×16 configuration.
3. BHE and BLE are applicable for ×16 configuration only.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-49918 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 18, 2011
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Cypress Semiconductor Electronic Components Datasheet

CY14B104LA Datasheet

4-Mbit (512 K X 8/256 K X 16) nvSRAM

No Preview Available !

CY14B104LA pdf
CY14B104LA, CY14B104NA
Contents
Pinouts .............................................................................. 3
Device Operation .............................................................. 5
SRAM Read ....................................................................... 5
SRAM Write ....................................................................... 5
AutoStore Operation ........................................................ 5
Hardware STORE Operation............................................ 5
Hardware RECALL (Power-Up) ....................................... 6
Software STORE ............................................................... 6
Software RECALL............................................................. 6
Preventing AutoStore....................................................... 7
Data Protection ................................................................. 7
Noise Considerations....................................................... 7
Best Practices................................................................... 8
Maximum Ratings............................................................. 9
Operating Range............................................................... 9
DC Electrical Characteristics .......................................... 9
AC Test Conditions ........................................................ 10
Data Retention and Endurance ..................................... 10
Capacitance .................................................................... 10
Thermal Resistance........................................................ 10
AC Switching Characteristics ....................................... 11
Switching Waveforms .................................................... 11
AutoStore/Power-Up RECALL....................................... 14
Switching Waveforms .................................................... 14
Software Controlled STORE/RECALL Cycle................ 15
Switching Waveforms .................................................... 15
Hardware STORE Cycle ................................................. 16
Switching Waveforms .................................................... 16
Truth Table For SRAM Operations................................ 17
For ×8 Configuration ................................................. 17
For ×16 Configuration ............................................... 17
Ordering Information...................................................... 18
Package Diagrams.......................................................... 20
Acronyms ........................................................................ 22
Document Conventions ............................................. 22
Units of Measure ....................................................... 22
Document History Page ................................................. 23
Sales, Solutions, and Legal Information ...................... 24
Worldwide Sales and Design Support....................... 24
Products .................................................................... 24
PSoC Solutions ......................................................... 24
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Document #: 001-49918 Rev. *H
Page 2 of 24
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Part Number CY14B104LA
Description 4-Mbit (512 K X 8/256 K X 16) nvSRAM
Maker Cypress Semiconductor
Total Page 24 Pages
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