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Cypress Semiconductor Electronic Components Datasheet

CY-62146DV30 Datasheet

4-Mbit (256K x 16) Static RAM

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CY-62146DV30 pdf
CY62146DV30
4-Mbit (256K x 16) Static RAM
Features
• Very high speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin-compatible with CY62146CV30
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 8 mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered 48-ball BGA and 44-pin TSOPII
• Also available in Lead-free packages
Functional Description[1]
The CY62146DV30 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL) in portable
applications such as cellular telephones. The device also has
Logic Block Diagram
AA190
A8
A7
A6
A5
A4
A3
A2
AA01
DATA IN DRIVERS
256K x 16
RAM Array
an automatic power-down feature that significantly reduces
power consumption. The device can also be put into standby
mode reducing power consumption by more than 99% when
deselected (CE HIGH). The input/output pins (I/O0 through
I/O15) are placed in a high-impedance state when: deselected
(CE HIGH), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A17). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A17).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The CY62146DV30 is available in a 48-ball VFBGA, 44-pin
TSOPII packages.
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
BHE
WE
CE
OE
BLE
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05339 Rev. *A
Revised February 2, 2005
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Cypress Semiconductor Electronic Components Datasheet

CY-62146DV30 Datasheet

4-Mbit (256K x 16) Static RAM

No Preview Available !

CY-62146DV30 pdf
Pin Configuration[2, 3, 4]
VFBGA (Top View)
12
34
56
BLE OE A0 A1 A2 NC
I/O8 BHE A3 A4 CE I/O0
I/O9 I/O10 A5 A6 I/O1 I/O2
VSS I/O11 A17 A7 I/O3 Vcc
VCC I/O12 DNU A16 I/O4 Vss
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 NC A12 A13 WE I/O7
NC A8 A9 A10 A11 NC
A
B
C
D
E
F
G
H
CY62146DV30
44 TSOP II (Top View)
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
AAA111657
AA1143
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O15
37 I/O14
36 I/O13
35
34
VI/OSS12
33
32
VCC
I/O11
31 I/O10
30
29
28
NII//OOC98
27 A8
26
25
AA910
24 A11
23 A12
Product Portfolio
Product
CY62146DV30L
CY62146DV30LL
CY62146DV30L
CY62146DV30LL
CY62146DV30L
CY62146DV30LL
VCC Range (V)
Min.
Typ.[5]
Max.
2.20V
3.0
3.60
2.20V
3.0
3.60
2.20V
3.0
3.60
Speed
(ns)
45
55
70
Power Dissipation
Operating ICC (mA)
f = 1MHz
Typ.[5] Max.
f = fmax
Typ.[5] Max.
Standby ISB2 (µA)
Typ.[5]
Max.
1.5 3
10 20
2
12
8
1.5 3
8 15 2
12
8
1.5 3
8 15 2
12
8
Notes:
2. NC pins are not internally connected on the die.
3. DNU pins have to be left floating or tied to VSS to ensure proper application.
4. Pins H1, G2, and H6 in the BGA package are address expansion pins for 8 Mb, 16 Mb, and 32 Mb, respectively.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
Document #: 38-05339 Rev. *A
Page 2 of 11
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Part Number CY-62146DV30
Description 4-Mbit (256K x 16) Static RAM
Maker Cypress
Total Page 11 Pages
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