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Comset Semiconductors
Comset Semiconductors

2N5681 Datasheet Preview

2N5681 Datasheet

(2N5681 / 2N5682) NPN Switching Transistors

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2N5681 pdf
2N5681 – 2N5682
NPN SWITCHING TRANSISTORS
The 2N5681 and 2N5682 are silicon expitaxial planar PNP
transistors in jedec TO-39 metal case.
They are intended for use as drivers for high power transistors
in general purpose, amplifier and switching circuit.
The complementary PNP types are the 2N5679 and 2N5680 .
Compliance to RoHS.
B
ABSOLUTE MAXIMUM RATINGS
C
E
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
IB =0
IE =0
IC =0
www.DataSheet.net/
Tamb = 25°C
Tcase = 25°C
Value
25681
2N5682
100 120
100 120
4
1
500
1
10
200
-65 to +150
Unit
V
V
V
A
mA
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/



Comset Semiconductors
Comset Semiconductors

2N5681 Datasheet Preview

2N5681 Datasheet

(2N5681 / 2N5682) NPN Switching Transistors

No Preview Available !

2N5681 pdf
2N5681 – 2N5682
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
ICBO
Collector Cutoff
Current
VCB = 100 V, IE = 0
VCB = 120 V, IE = 0
2N5679
2N5680
-
-
1 µA
ICEO
Collector Cutoff
Current
VCE = 70 V, IB = 0
VCE = 80 V, IB = 0
2N5679
2N5680
-
- 10 µA
VCE = 100 V, VBE = -1.5 V 2N5679
VCE = 120 V, VBE = -1.5 V 2N5680
-
-
1 µA
ICEV
Collector Cutoff
Current
VCE = 100 V, VBE = -1.5 V
TC = 150°C
VCE = 120 V, VBE = -1.5 V
TC = 150°C
2N5679
2N5680
-
-
1 mA
IEBO
Emitter Cutoff
Current
VBE = 4.0 V, IC = 0
2N5679
2N5680
-
-
1 µA
VCEO(sus)
Collector Emitter
Sustaining voltage (*)
IC = 10 mA, IB = 0
2N5679 100
2N5680 120
-
-
-
-
V
IC = 250 mA
IB = 25 mA
www.DataSheet.net/
2N5679
2N5680
-
- 0.6
VCE(SAT)
Collector-Emitter
IC = 500 mA
saturation Voltage (*) IB = 50 mA
2N5679
2N5680
-
-
1V
IC = 1 A
IB = 200 mA
2N5679
2N5680
-
-
2
VBE
Base-Emitter Voltage
(*)
IC = 250 mA, VCE = 2 V
2N5679
2N5680
-
-
1
hFE
DC Current Gain (*)
IC = 250 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
2N5679
2N5680
2N5679
2N5680
40
5
- 150 V
--
fT
Transition frequency
IC = 100 mA, VCE = 10 V
f = 10 MHz
2N5679
2N5680
30
-
- MHz
COB
Output Capacitance
IE = 0, VCB = 20 V
f = 1MHz
2N5679
2N5680
-
- 50 pF
hfe
Small Signal Current IC = 200 mA, VCE = 1.5 V 2N5679
Gain
f = 1 kHz
2N5680
40
-
-
-
(*) Pulse Width 300 µs, Duty Cycle 2.0%
04/09/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N5681
Description (2N5681 / 2N5682) NPN Switching Transistors
Maker Comset Semiconductors
Total Page 3 Pages
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2N5681 pdf
2N5681 Datasheet PDF
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