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CYStech Electronics
CYStech Electronics

MTS2072G6 Datasheet Preview

MTS2072G6 Datasheet

Dual N-Channel Enhancement Mode MOSFET

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MTS2072G6 pdf
CYStech Electronics Corp.
Spec. No. : C879G6
Issued Date : 2012.10.09
Revised Date :
Page No. : 1/13
Dual N-Channel Enhancement Mode MOSFET
MTS2072G6 BVDSS
Tr1(N-CH)
60V
ID 0.53A(VGS=10V)
RDSON(TYP.)
1.2Ω(VGS=10V)
1.6Ω(VGS=4.5V)
Tr2(N-CH)
30V
5.6A(VGS=10 V)
16.6mΩ(VGS=10V)
24.7mΩ(VGS=4.5V)
Description
The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low gate charge
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTS2072G6
Outline
TSOP-6
S2
G2
D1
GGate
SSource
DDrain
Pin 1
D2
S1
G1
MTS2072G6
CYStek Product Specification



CYStech Electronics
CYStech Electronics

MTS2072G6 Datasheet Preview

MTS2072G6 Datasheet

Dual N-Channel Enhancement Mode MOSFET

No Preview Available !

MTS2072G6 pdf
CYStech Electronics Corp.
Spec. No. : C879G6
Issued Date : 2012.10.09
Revised Date :
Page No. : 2/13
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C, VGS=10V (Note 1)
Continuous Drain Current @TA=70 °C, VGS=10V (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Rth,ja
Limits
N-channel N-channel
60 30
±20 ±20
0.53 5.6
0.42 4.5
1 20
1.14
0.01
-55~+150
110
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec; 180°C/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
Tr 1, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
60
0.9
-
-
-
-
-
100
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
-
1.5
-
2.4
V
VGS=0, ID=250μA
VDS=VGS, ID=250μA
- ±10
VGS=±20V, VDS=0
- 1 μA VDS=60V, VGS=0
- 10
VDS=48V, VGS=0, Tj=70°C
1.2
1.6
2.5
3
Ω
ID=500mA, VGS=10V
ID=100mA, VGS=4.5V
215 - mS VDS=10V, ID=100mA
31 -
6 - pF VDS=10V, VGS=0, f=1MHz
4.1 -
2.5 -
6.3
6
-
-
ns VDS=30V, ID=100mA, VGS=10V, RG=25Ω
4.4 -
0.9 -
0.1 - nC VDS=30V, ID=0.53A, VGS=10V
0.3 -
-
-
0.53
1
A
0.8 1.2 V VGS=0V, IS=100mA
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTS2072G6
CYStek Product Specification


Part Number MTS2072G6
Description Dual N-Channel Enhancement Mode MOSFET
Maker CYStech Electronics
Total Page 13 Pages
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