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CEU9926 Datasheet Preview

CEU9926 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEU9926 pdf
CED9926/CEU9926
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 26A, RDS(ON) = 30m@VGS = 4.5V.
RDS(ON) = 40m@VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
20
±12
26
78
38
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2003.May
6 - 130
http://www.cetsemi.com



CET
CET

CEU9926 Datasheet Preview

CEU9926 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU9926 pdf
CED9926/CEU9926
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 8A
0.5
1.5 V
30 m
VGS = 2.5V, ID = 6.6A
40 m
VDS = 10V, ID = 8A
15 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
500
300
pF
pF
Crss 140 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 8A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns
18 40 ns
60 108 ns
28 56 ns
10 15 nC
2.3 nC
2.9 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 4A
26 A
1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
6 - 131


Part Number CEU9926
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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