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CEU3089 Datasheet Preview

CEU3089 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

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CEU3089 pdf
CEU3089
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRELIMINARY
FEATURES
30V , 25A , RDS(ON) = 8m@VGS = 10V.
RDS(ON) = 12m@VGS = 5V.
-30V , -16A , RDS(ON) = 20m@VGS = 10V.
RDS(ON) = 30m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-252-4L package.
S1
G1
S2
G2
D1/D2
CEU SERIES
TO-252-4L
D1/D2
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous e
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 30 30
VGS ±20 ±20
ID d 25 -16
IDM 100 -56
10.4
PD 0.08
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
12
50
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com



CET
CET

CEU3089 Datasheet Preview

CEU3089 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU3089 pdf
CEU3089
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 11A
VGS = 5V, ID = 7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 7A,
VGS = 10V, RGEN = 3.3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 24V, ID = 7A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 2.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Calculated continuous current based on the maximum allowable junction temperature.
Min
30
1
Typ
6.4
7.6
1875
570
160
18
4
45
6
18
5
8
Max Units
1
100
-100
V
µA
nA
nA
3V
8 m
12 m
pF
pF
pF
36 ns
8 ns
90 ns
12 ns
23 nC
nC
nC
25 A
1.2 V
2


Part Number CEU3089
Description Dual N- & P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
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