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CES2361 Datasheet Preview

CES2361 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CES2361 pdf
CES2361
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -2.2A, RDS(ON) = 150m@VGS = -10V.
RDS(ON) = 200m@VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -2.2
IDM -8.8
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com



CET
CET

CES2361 Datasheet Preview

CES2361 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CES2361 pdf
CES2361
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -1A
VGS = -4.5V, ID = -0.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID= -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -2A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
110 150 m
150 200 m
645 pF
65 pF
40 pF
12 24 ns
4 8 ns
30 60 ns
4 8 ns
12 15.6 nC
1.8 nC
2.5 nC
-1 A
-1.2 V
2


Part Number CES2361
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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