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CEM6338 Datasheet Preview

CEM6338 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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CEM6338 pdf
CEM6338
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 5.2A, RDS(ON) = 41m@VGS = 10V.
RDS(ON) = 55m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 5.2
IDM 20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com



CET
CET

CEM6338 Datasheet Preview

CEM6338 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM6338 pdf
CEM6338
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.2A
VGS = 4.5V, ID = 4.7A
1
3V
33 41 m
41 55 m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS VDS = 15V, ID = 5.2A 10 S
Ciss
Coss
VDS = 30V, VGS = 0V,
f = 1.0 MHz
745
100
pF
pF
Crss 60 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 5.2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 28
5 10
36 72
6 12
22.2 29.5
3.2
4.7
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
5.2 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
2


Part Number CEM6338
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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