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CEM4450 Datasheet Preview

CEM4450 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEM4450 pdf
CEM4450
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 7.5A, RDS(ON) = 24m@VGS = 10V.
RDS(ON) = 39m@VGS = 6V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 7.5
IDM 30
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 2. 2007.July
http://www.cetsemi.com



CET
CET

CEM4450 Datasheet Preview

CEM4450 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM4450 pdf
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7.5A
VGS = 6V, ID = 6A
VDS = 15V, ID = 7.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 7.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEM4450
Min Typ Max Units
60 V
1 µA
100 nA
-100 nA
2 4V
20 24 m
30 39 m
10 S
1450
400
50
pF
pF
pF
18 35 ns
5 12 ns
32 72 ns
10 32 ns
28 36 nC
6.5 nC
6.0 nC
7.5 A
1.2 V
5
2


Part Number CEM4450
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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