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CEM4309 Datasheet Preview

CEM4309 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

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CEM4309 pdf
CEM4309
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
40V, 5.8A, RDS(ON) = 38m@VGS = 10V.
RDS(ON) = 50m@VGS = 4.5V.
-40V, -4.1A, RDS(ON) = 67m@VGS = -10V.
RDS(ON) = 106m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 40
VGS ±20
ID 5.8
IDM 23
P-Channel
-40
±20
-4.1
-16
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Dec
http://www.cetsemi.com



CET
CET

CEM4309 Datasheet Preview

CEM4309 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM4309 pdf
CEM4309
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.6A
VDS = 15V, ID = 5.8A
1
3V
32 38 m
40 50 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
680
110
pF
pF
Crss 65 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 20V, ID = 5.8A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 5.8A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
11 22 ns
3 6 ns
26 52 ns
3 6 ns
6.4 8.5 nC
1.7 nC
2.8 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.9A
5.8 A
1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2


Part Number CEM4309
Description Dual N- & P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
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