http://www.www.datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





CET
CET

CEM2239 Datasheet Preview

CEM2239 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM2239 pdf
CEM2239
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
20V, 7.6A, RDS(ON) = 22m@VGS = 4.5V.
RDS(ON) = 32m@VGS = 2.5V.
-20V, -5.9A, RDS(ON) = 35m@VGS = -4.5V.
RDS(ON) = 50m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 7.6
IDM 30
P-Channel
-20
±12
-5.9
25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.July
http://www.cetsemi.com



CET
CET

CEM2239 Datasheet Preview

CEM2239 Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM2239 pdf
CEM2239
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 7.6A
VGS = 2.5V, ID = 6.1A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
gFS
Ciss
Coss
Crss
VDS = 5V, ID = 7.6A
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 6A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
20
0.5
Typ
17
24
19
1565
360
255
15
11
47
20
16
2.4
5.0
Max Units
1
100
-100
V
µA
nA
nA
1.2 V
22 m
32 m
S
pF
pF
pF
30 ns
22 ns
94 ns
40 ns
22 nC
nC
nC
7.6 A
1.2 V
2


Part Number CEM2239
Description Dual N- & P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
PDF Download
CEM2239 pdf
CEM2239 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 CEM2239 Dual N- & P-Channel Enhancement Mode Field Effect Transistor CET
CET
CEM2239 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy