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CEM2108E Datasheet Preview

CEM2108E Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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CEM2108E pdf
CEM2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13m@VGS = 10V.
RDS(ON) = 14m@VGS = 4.5V.
RDS(ON) = 19m@VGS = 2.5V.
RDS(ON) = 27m@VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2
8765
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@TA = 25 C
@TA = 70 C
Drain Current-Pulsed a
Maximum Power Dissipation@TA = 25 C
@TA = 70 C
VDS
VGS
ID
IDM
PD
20
±12
10
7.8
40
2.0
1.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
A
W
W
C
Units
C/W
This is preliminary information on a new product in development now .
Specification and data are subject to change without notice .
1
Rev 1. 2012.sep
http://www.cetsemi.com



CET
CET

CEM2108E Datasheet Preview

CEM2108E Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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CEM2108E pdf
CEM2108E
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA 0.5
1V
VGS = 10V, ID = 8A
10 13 m
VGS = 4.5V, ID = 4A
11 14 m
VGS = 2.5V, ID = 2A
13 19 m
VGS = 1.8V, ID = 1A
19 27 m
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
35
185
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 8A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
487
800
1728
6180
5
1
3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.6A
1.6 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2


Part Number CEM2108E
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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