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CED110P03 Datasheet Preview

CED110P03 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CED110P03 pdf
CED110P03/CEU110P03
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -92A, RDS(ON) =6.0m@VGS = -10V.
RDS(ON) =9.0m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Pulsed a
@ TC = 100 C
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS -30
VGS ±20
-92
ID -60
IDM -368
73.5
PD 0.59
EAS
IAS
TJ,Tstg
612.5
35
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Sep
http://www.cetsemi.com



CET
CET

CED110P03 Datasheet Preview

CED110P03 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CED110P03 pdf
CED110P03/CEU110P03
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -30A
VGS = -4.5V, ID = -20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN= 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -15A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 1mH, IAS = 35A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
-30
-1
Typ
5
6.4
5660
1505
775
22
15
200
128
65
14
27
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
6 m
9 m
pF
pF
pF
44 ns
30 ns
400 ns
256 ns
85 nC
nC
nC
-95 A
-1.2 V
5
2


Part Number CED110P03
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CED110P03 pdf
CED110P03 Datasheet PDF
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